Image sensor including a photodiode
US12170298B2 · kind B2 · utility
0Cited by
8References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2021 |
| Grant date | Dec 17, 2024 |
| Priority date | — |
| Expiry date | Feb 16, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
An image sensor includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a buried transfer gate electrode arranged in a transfer gate trench extending from the first surface of the semiconductor substrate into the semiconductor substrate, wherein the buried transfer gate electrode has an upper surface arranged at a level lower than that of the first surface of the semiconductor substrate with respect to the second surface of the semiconductor substrate; and a transfer gate spacer arranged on an upper sidewall of the transfer gate trench and on the buried transfer gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.