Method for manufacturing a mixed layer comprising a silicon waveguide and a silicon nitride waveguide

US12174425B2 · kind B2 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• THALES · FR

Inventors

• Stephane Malhouitre · Kessel-Lo, BE
• David Bitauld · Cambridge, GB
• Karim Hassan · Auxerre, FR
• Joan Ramirez · Bures-Montjay, FR
• Alexandre Shen · Palaiseau, FR

Key dates

• Filing date: Apr 6, 2021
• Grant date: Dec 24, 2024
• Expiry date: Nov 6, 2041

Classification

• Technology area (CPC G): Physics
• CPC primary: G02B2006/12061
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A fabricating process may include: producing a trench, in an encapsulated-silicon layer, in the location where a silicon-nitride core of the waveguide must be produced; then depositing a silicon-nitride layer on the encapsulated-silicon layer, the thickness of the deposited silicon-nitride layer being sufficient to completely fill the trench; then removing the silicon nitride situated outside of the trench to uncover an upper face with which the trench filled with silicon nitride is flush; then depositing a dielectric layer that covers the uncovered upper face in order to finalize the encapsulation of the silicon-nitride core and thus to obtain a mixed layer containing both the silicon and silicon-nitride cores encapsulated in dielectric.