Multi-layered magnetic random access memory and electronic device
US12176017B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 14, 2022 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Nov 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
One example magnetic random access memory includes a plurality of structural units and a plurality of voltage control lines. The plurality of voltage control lines are in parallel with each other. Planes in which the plurality of structural units are located are in parallel with each other, and a plane in which each of the plurality of structural units is located is perpendicular to the plurality of voltage control lines. Each structural unit includes a multi-layer storage structure including multiple layers that are stacked in sequence. Each layer of the multi-layer storage structure includes an electrode line and a plurality of storage units disposed on the electrode line. Each of the plurality of storage units includes a magnetic tunnel junction. A first end of each storage unit is connected to the electrode line, and a second end of each storage unit is connected to one of the plurality of voltage control lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.