Patent · US Active

Method for manufacturing a silicon carbide device

US12176207B2 · kind B2 · utility

0Cited by
3References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 22, 2020
Grant dateDec 24, 2024
Priority date—
Expiry dateApr 22, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/8325
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method of forming a semiconductor structure, the method comprises:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.