Thin film transistor including crystallized semiconductor, display device including the same, manufacturing method of the same, and method for crystallizing semiconductor
US12176353B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2023 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Jan 20, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film transistor according to an exemplary embodiment includes: a substrate; a semiconductor layer disposed on the substrate and including a channel region, and an input region and an output region disposed on both sides of the channel region and doped with an impurity; a buffer layer disposed between the substrate and the semiconductor layer; a control electrode overlapping the semiconductor layer; a gate insulation layer disposed between the semiconductor layer and the control electrode; and an input electrode connected to the input region and an output electrode connected to the output region, wherein the semiconductor layer includes polysilicon and is crystallized by a blue laser scan.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.