Semiconductor device with non-volatile memory cell and manufacturing method thereof

US12176402B2 · kind B2 · utility

Assignee

• SK keyfoundry Inc. · KR

Inventors

• Min Kuck Cho · Cheongju-si, KR
• Jae Hoon Kim · Seoul, KR
• Seung-Hoon Lee · Yongin-si, KR

Key dates

• Filing date: Jul 27, 2023
• Grant date: Dec 24, 2024
• Expiry date: Jul 27, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6892

Abstract

A manufacturing method of a semiconductor device, includes providing a substrate; forming a stacked gate, including a floating gate and a control gate, on the substrate; forming a stacked gate by a deposition of a select gate conductive layer on the stacked gate; forming a trench in the stacked gate by etching the stacked gate to separate a first select gate pattern and a second select gate pattern; and forming a first select gate, a second select gate, a first transistor, and a second transistor simultaneously through an etch-back process of the stacked gate.