Trench MOSFET and method for manufacturing the same
US12176406B2 · kind B2 · utility
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22References
7Claims
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Key dates
| Filing date | Dec 7, 2020 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Oct 12, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/2527
Abstract
A trench MOSFET can include: a semiconductor layer having a first doping type; a trench extending from an upper surface of the semiconductor layer to internal portion of the semiconductor layer; insulating layers and electrode conductors located in the trench; a body region having a second doping type in an upper region of the semiconductor layer adjacent to the trench; and a floating region having the first doping type located in a predetermined position of the semiconductor layer adjacent to both sides of the trench, where the floating region is located below the body region and is separated from the body region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.