Trench-type MOSFET and method for manufacturing the same
US12176432B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2021 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Feb 24, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a trench-type MOSFET and a method for manufacturing the same. The method comprises: forming a trench in a semiconductor substrate; forming a first insulating layer and a shielding conductor in the trench; forming an opening on two sides of the shielding conductor in the trench, wherein the opening is separated from the shielding conductor by the first insulating layer; forming a gate dielectric layer and a gate conductor in the opening, wherein the trench extends from an upper surface of the semiconductor substrate into the semiconductor substrate, the first insulating layer covers a sidewall and a bottom of the trench and separates the shielding conductor from the semiconductor substrate, the gate dielectric layer at least covers a sidewall of the opening. The method simplifies the process steps of forming the trench-type MOSFET compared with the prior art, and reduces process errors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.