Momentum-matching and band-alignment van der waals (vdW) infrared photodetector and fabrication method thereof

US12176451B2 · kind B2 · utility

Assignee

• Shanghai Institute of Technical Physics Chinese Academy of Sciences · CN

Inventors

• Weida Hu · Shanghai, CN
• Zhen Wang · Shanghai, CN
• Yunfeng Chen · Dongguan, CN
• Jinshui Miao · Shanghai, CN
• Peng Wang · Shandong, CN
• Fang Zhong · Wuxi, CN
• Ting He · Xi'an, CN
• Runzhang Xie · Shanghai, CN
• Fang Wang · Foster City, US
• Xiaoshuang Chen · Shanghai, CN
• Wei Lu · Ann Arbor, US

Key dates

• Filing date: Jun 24, 2022
• Grant date: Dec 24, 2024
• Expiry date: Jul 6, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/121
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

The present disclosure provides a momentum-matching and band-alignment van der Waals (vdW) infrared photodetector and a fabrication method thereof. The photodetector includes a substrate, a dielectric layer, a Bi2O2Se layer, a black phosphorus (BP) layer, a metal source and a metal drain. The fabrication method includes: transferring, in a wet manner, the Bi2O2Se layer grown on the mica substrate onto the substrate having the dielectric layer, transferring the mechanically exfoliated BP layer through a micro-region fixed-point transfer device onto the Bi2O2Se layer, and separately fabricating the metal source and the metal drain on the Bi2O2Se layer and the BP layer by processes such as electron beam exposure and electron beam evaporation, thereby forming the momentum-matching and band-alignment vdW infrared photodetector having a vertical structure.