Light emitting device and manufacturing method thereof
US12176458B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 22, 2023 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Aug 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8312
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light emitting device includes a substrate; a pattern of a plurality of protrusions protruding from the substrate; a first semiconductor layer provided on the substrate; an active layer provided on the first semiconductor layer; and a second semiconductor layer provided on the active layer, in which each of the protrusions includes a first layer formed integrally with the substrate and protruding from an upper surface of the base substrate; and a second layer provided on the first layer and formed of a material different from that of the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.