Method for producing an optoelectronic component, and optoelectronic component
US12176464B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2018 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Jan 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/034
Abstract
A method for producing an optoelectronic component by providing a semiconductor layer sequence on a substrate where the semiconductor layer sequence is configured to emit radiation. The method may further include applying a contact layer to the semiconductor layer sequence where the contact layer has a layer thickness of at most 10 nm. The method may further include applying a reflective layer to the contact layer and applying a barrier layer directly to the reflective layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.