Patent · US Active

Light-emitting device

US12176465B2 · kind B2 · utility

0Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 20, 2023
Grant dateDec 24, 2024
Priority date
Expiry dateApr 20, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/835

Abstract

A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.