Fast pulse, high current laser drivers
US12176679B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2020 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Sep 1, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K3/012
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Pulsed laser drivers are disclosed comprising Gallium Nitride (GaN) power transistors for driving diode laser systems requiring high current and fast pulses, such as laser drivers for LIDAR (Light Detection and Ranging) systems. Drivers are capable of delivering pulses with peak current ≥100 A, e.g. 170 A to provide high peak power, fast pulses with nanosecond rise times and nanosecond pulse duration, for driving multi-channel laser diode arrays with 40 A per channel for 120 W output per channel for a combined peak output of 480 W. For lower duty cycle, example driver circuits are disclosed comprising a high current power transistor for direct drive with drive assist. For higher duty cycle, example resonant driver circuits are disclosed comprising two high current power transistors. Implementation of resonant driver circuits with GaN technology provides fast charging for short pulse operation at higher repetition rates or for pulse code modulation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.