Patent · US Active

Laser element

US12176683B2 · kind B2 · utility

0Cited by
2References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 16, 2021
Grant dateDec 24, 2024
Priority date
Expiry dateMay 29, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/176
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A laser element comprises a substrate; and an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer, and an electrode layer successively laminated on one principal surface of the substrate, wherein the p-type semiconductor layer includes a ridge raised in a stripe shape, the ridge including a contact layer formed in a layer including a principal surface on a side opposite to the substrate, a stepped portion defined by recessing the contact layer is formed in at least part of a boundary between a lateral surface among surfaces defining outer edges of the ridge, the lateral surface extending along a lengthwise direction of the ridge, and the principal surface of the ridge, and the electrode layer covers the principal surface of the ridge and the stepped portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.