Bulk acoustic wave resonator and fabrication method thereof
US12176880B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 26, 2023 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | May 26, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/023
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A bulk acoustic wave (BAW) resonator includes a substrate, a piezoelectric layer disposed above the substrate, a first electrode disposed below the piezoelectric layer, a second electrode disposed above the piezoelectric layer, a first dielectric layer, a second dielectric layer, and a third dielectric layer disposed between the substrate and the piezoelectric layer, and a bonding layer disposed between the third dielectric layer and the substrate. The first dielectric layer is disposed below the piezoelectric layer and includes a cavity. The third dielectric layer is disposed below the first dielectric layer and includes a protruding structure protruding towards the piezoelectric layer. The second dielectric layer overlays the third dielectric layer including the protruding structure, the second dielectric layer and the protruding structure of the third dielectric layer constituting a double-wall boundary structure surrounding the cavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.