Photoelectric conversion element, solid-state imaging device, and electronic device
US12178058B2 · kind B2 · utility
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Key dates
| Filing date | Aug 21, 2023 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Aug 21, 2043 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
To provide a photoelectric conversion element that can improve image quality. Provided is a photoelectric conversion element including at least a first electrode, a work function control layer, a photoelectric conversion layer, an oxide semiconductor layer, and a second electrode in this order, and further including a third electrode, in which the third electrode is provided apart from the second electrode and is provided facing the photoelectric conversion layer via an insulating layer, and the work function control layer contains a larger amount of oxygen than an amount of oxygen satisfying a stoichiometric composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.