Fabrication methods
US12178141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 27, 2021 |
| Grant date | Dec 24, 2024 |
| Priority date | — |
| Expiry date | Jun 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N60/85
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a method of selectively patterning a device structure. A hollow shadow wall is formed on a substrate. The hollow shadow wall is formed of a base lying on a surface of the substrate, and one or more side walls connected to the base. The one or more side walls extend away from the surface of the substrate and around the base to define an internal cavity of the hollow shadow wall. A device structure supported by the substrate adjacent to the shadow wall is selectively patterned by using a deposition beam to selectively deposit a layer of deposition material on the device structure. The deposition beam has a non-zero angle of incidence relative to a normal to the surface of the substrate and an orientation in the plane of the substrate's surface, such that the shadow wall prevents deposition on a surface portion of the device structure within a shadow region defined by the shadow wall. The one or more side walls of the hollow shadow wall are removed once the device structure has been selectively patterned, and thereby selectively patterning the device component.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.