Method for monitoring process conditions of, and method for controlling, a plasma PVD process
US12180579B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2021 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Jun 29, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3467
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method (200) for monitoring process conditions in a plasma PVD process as well as a method (300) for controlling a plasma PVD process are disclosed. The methods are performed in an apparatus (1) configured therefore. In accordance with the methods, an oscillating voltage signal is applied to a target (3), arranged in the apparatus (1), by means of a radio frequency generator 15). The response from the applied oscillating voltage signal is recorded by means of a radio frequency sensor (16). Based on the recorded response, information regarding at least one plasma process condition is derived. A computer program and a computer-readable medium are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.