Patent · US Active

Hybrid metal line structure

US12183671B2 · kind B2 · utility

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20Claims
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Assignee

Inventors

Key dates

Filing dateMay 8, 2023
Grant dateDec 31, 2024
Priority date
Expiry dateMay 8, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L23/53295
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The present disclosure relates to an integrated chip that includes a substrate, a first metal line, and a hybrid metal line. The first metal line includes a first metal material and is within a first interlayer dielectric (ILD) layer over the substrate. The hybrid metal line is also within the first ILD layer. The hybrid metal line includes a pair of first metal segments that comprise the first metal material. The hybrid metal line further includes a second metal segment that comprises a second metal material that is different from the first metal material. The second metal segment is laterally between the pair of first metal segments.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.