Notch shape of trench gate bottom corner for better breakdown voltage of power MOSFET and IGBT with good trade off to ron and ox reliability
US12183795B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Mar 29, 2022 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | May 9, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
The present invention provides a device having a trench gate structure and a method of making the same. The device comprises a substrate, a drift region, a well region, a trench gate, a heavily-doped region, and an electrode positioned on the heavily-doped region. The structure of the device is simple to provide good VDMOS and IGBT breakdown voltages, and meanwhile take on-state resistance and reliability of oxide into account.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.