Thin film transistor, method of manufacturing the same, and electronic device
US12183829B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2021 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Jan 20, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
Disclosed are a method of manufacturing a thin film transistor, a thin film transistor, and an electronic device. The method of manufacturing a thin film transistor includes forming an oxide semiconductor layer, forming a gate electrode overlapped with at least a portion of the oxide semiconductor layer, and forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, wherein the forming of the oxide semiconductor layer includes preparing a precursor solution for an oxide semiconductor, and performing spray pyrolysis of the precursor solution for the oxide semiconductor to obtain a c-axis aligned crystalline oxide semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.