Semiconductor device
US12184243B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2021 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Aug 10, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2200/468
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.