Etching and thinning for the fabrication of lithographically patterned diamond nanostructures
US12184259B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Sep 3, 2021 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Dec 5, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/025
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A back side of a diamond or other substrate is thinned using plasma etches and a mask situated away from the back side by a spacer having a thickness between 50 μm and 250 μm. Typically, a combined RIE/ICP etch is used to thin the substrate from 20-40 μm to less than 1 μm. For applications in which color centers are implanted or otherwise situated on a front side of the diamond substrate, after thinning, a soft graded etch is applied to reduce color center linewidth, particularly for nitrogen vacancy (NV) color centers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.