Method for manufacturing semiconductor device and semiconductor device
US12185525B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2021 |
| Grant date | Dec 31, 2024 |
| Priority date | — |
| Expiry date | Jan 11, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/14
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for manufacturing a semiconductor device and a semiconductor device. The method for manufacturing a semiconductor device includes: providing a substrate; forming a plurality of first structures extending in a first direction on the substrate; forming a sacrificial layer on sidewalls of the first structures; forming an outer spacer layer on a sidewall of the sacrificial layer; removing part of the outer spacer layer to obtain a patterned outer spacer layer that exposes part of the sacrificial layer; and removing the sacrificial layer to form air gaps between the patterned outer spacer layer and the first structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.