Silicon nitride sintered body, silicon nitride substrate, and silicon nitride circuit board
US12187651B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 10, 2020 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Aug 3, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1131
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase, dislocation defect portions exists inside at least some of the silicon nitride crystal grains. A percentage of a number of the at least some of the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in any cross section or surface of the silicon nitride sintered body is not less than 50% and not more than 100%. It is favorable that a plate thickness of the silicon nitride substrate, in which the silicon nitride sintered body is used, is within the range not less than 0.1 mm and not more than 0.4 mm. The TCT characteristics can be improved by using the silicon nitride substrate in the silicon nitride circuit board.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.