Layer
US12188127B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2021 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Sep 27, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a layer of crystalline ytterbium doped zirconia on a substrate is disclosed. The method includes depositing a solution including precursor metal salts of the ytterbium doped zirconia onto a surface of the substrate, wherein the surface is a metallic or a ceramic surface. The solution is dried to form a film of the precursor metal salts on the surface. The film of the precursor metal salts is heated to decompose it to form an ytterbium doped zirconia. The previous steps may optionally be repeated. The film(s) are fired in order to form the layer of crystalline ytterbium doped zirconia. The ytterbium doped zirconia has a formula: ([YbxM1−x]2O3)z(ZrO2)1−z wherein M is a metallic dopant ion; z is in the range of 0.03 to 0.13; and x is in the range of 0.05 to 1.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.