Semiconductor reaction chamber and atomic layer plasma etching apparatus
US12191114B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 2021 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Aug 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a semiconductor reaction chamber and an atomic layer plasma etching apparatus. The semiconductor reaction chamber includes a dielectric window and a reaction chamber body. The spray head is arranged between the dielectric window and the top wall of the reaction chamber body, and divides the plasma generation area into an upper strong plasma area and a lower weak plasma area. Moreover, a plurality of through-holes are distributed in the central area of the spray head and configured to allow the plasma in the strong plasma area to pass through. A first gas channel is arranged in an edge area of the spray head. The process reaction gas inlet member is located on a side where the gas inlet end of the first gas channel of the spray head is located. A second gas channel is arranged in the process reaction gas inlet member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.