Plasma etching method using perfluoroisopropyl vinyl ether
US12191141B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Feb 18, 2021 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Dec 3, 2041 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etching method is disclosed. The plasma etching method comprises: a first step of vaporizing liquid perfluoroisopropyl vinylether (PIPVE); a second step of supplying, to a plasma chamber in which an object to be etched is arranged, the vaporized PIPVE and a discharge gas comprising argon gas; and a third step of discharging the discharge gas so as to generate plasma, and using same so as to plasma-etch the object to be etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.