Method for enhancing stability of N-type semiconductor through oxygen elimination
US12191159B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2024 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Apr 19, 2044 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for enhancing the stability of an N-type semiconductor through oxygen elimination includes constructing an antioxidant layer on the surface of a semiconductor material, or blending the antioxidant with the N-type semiconductor material. The antioxidant removes the existing oxygen and related species in the N-type semiconductor, eliminates the related trap state, and prevents the N-type semiconductor from further degrading, so that the electrical properties such as mobility of the N-type semiconductor device are improved, and the operation stability and long-term storage stability are improved. In addition, the antioxidant also inhibits the photobleaching of N-type semiconductors and significantly improves the photochemical stability of N-type semiconductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.