Semiconductor device with a supporting member and bonded metal layers
US12191223B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 20, 2023 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Apr 20, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/19107
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The semiconductor device includes a supporting member, a conductive member, and a semiconductor element. The supporting member has a supporting surface facing in a thickness direction. The conductive member has an obverse surface facing the same side as the supporting surface faces in the thickness direction, and a reverse surface opposite to the obverse surface. The conductive member is bonded to the supporting member such that the reverse surface faces the supporting surface. The semiconductor element is bonded to the obverse surface. The semiconductor device further includes a first metal layer and a second metal layer. The first metal layer covers at least a part of the supporting surface. The second metal layer covers the reverse surface. The first metal layer and the second layer are bonded to each other by solid phase diffusion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.