Heat dissipating substrate comprising diamond and semiconductor integrated device including the same
US12191227B2 · kind B2 · utility
0Cited by
2References
18Claims
0Family size
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Key dates
| Filing date | Nov 3, 2021 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Aug 28, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/68345
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a heat dissipating substrate including a diamond substrate, wherein an upper portion of the diamond substrate has a concave-convex structure including recessed regions that are spaced apart from each other, and insulation patterns that fill the recessed regions. The insulation patterns include at least one of silicon carbide, silicon nitride, silicon oxide, aluminum nitride, and aluminum oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.