Integrated circuit structure with resistive semiconductor material for back well

US12191300B2 · kind B2 · utility

Assignee

• GLOBALFOUNDRIES U.S. Inc. · US

Inventors

• Robert J. Gauthier, JR. · Williston, US
• Rajendran Krishnasamy · South Burlington, US
• Anupam Dutta · Sherghati, IN
• Anindya Nath · Butlers Corners, US
• Xiangxiang Lu · Singapore, SG
• Satyasuresh Vvss Choppalli · Kanchinakote, IN
• Lin Lin · Riverside, US

Key dates

• Filing date: May 11, 2022
• Grant date: Jan 7, 2025
• Expiry date: Jul 1, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/811

Abstract

Embodiments of the disclosure provide an integrated circuit (IC) structure with resistive semiconductor material for a back well. The IC structure may include a semiconductor substrate having a deep well, and a device within a first portion of the deep well. The device includes a first doped semiconductor material coupled to a first contact, and a second doped semiconductor material coupled to a second contact. The deep well couples the first doped semiconductor material to the second doped semiconductor material. A first back well is within a second portion of the deep well. A first resistive semiconductor material is within the deep well and defines a boundary between the first portion of the deep well and the second portion of the deep well.