Uniform-bridge-gradient time-of-flight photodiode for image sensor pixel
US12191329B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 16, 2021 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Apr 30, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/20
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A uniform bridge gradient (UBG) time-of-flight (ToF) photodiode block is described, such as for integration with image sensor pixels. The UBG ToF photodiode block can be part of a UBG ToF pixel, and an image sensor can include an array of such pixels. Each UGB ToF photosensor block has multiple taps for selective activation, and a photodiode region designed for complete and rapid transit of photocarriers, as they are generated, via the multiple taps. Embodiments of the photodiode region include a photodiode-defining implant, a relatively shallow first bridging implant, and relatively deep second bridging implant. The bridging implants provide lateral bridging with a uniform doping gradient near and across the multiple taps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.