Capacitors of semiconductor device capable of operating in high frequency operation environment
US12191348B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 2023 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Sep 7, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/6661
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Provided are capacitors of semiconductor devices, wherein the capacitors may be used in a high-frequency operation environment. A capacitor includes a first electrode layer, a dielectric layer on the first electrode layer, and a second electrode layer on the dielectric layer, wherein the dielectric layer includes a plurality of unit dielectric layers, and the unit dielectric layer includes first and second sub-dielectric layers that have different dielectric constants and conductivities from each other and are connected in series, and the first and second sub-dielectric layers have a conductivity difference so that the capacitance of the dielectric layer converges to the capacitance of the unit dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.