Method for forming a semiconductor structure
US12191377B2 · kind B2 · utility
0Cited by
6References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 22, 2021 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Feb 16, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0223
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor structure includes forming a gate structure on a substrate, performing a deposition process to form a nitride layer to cover the substrate and the gate structure, performing an in-situ annealing process to the nitride layer, and performing an anisotropic etching process to the nitride layer after the in-situ annealing process to form a spacer on a sidewall of the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.