Power semiconductor device and method of fabricating the same
US12191386B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2024 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Mar 13, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A power semiconductor device includes a semiconductor layer of silicon carbide (SiC), at least one trench that extends in one direction, a gate insulating layer disposed on at least an inner wall of the at least one trench, at least one gate electrode layer disposed on the gate insulating layer, a drift region disposed in the semiconductor layer at least on one side of the at least one gate electrode layer, a well region disposed in the semiconductor layer to be deeper than the at least one gate electrode layer, a source region disposed in the well region, and at least one channel region disposed in the semiconductor layer of one side of the at least one gate electrode layer between the drift region and the source region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.