Vertical cavity surface emitting laser device with monolithically integrated photodiode

US12191630B2 · kind B2 · utility

Assignee

• TRUMPF PHOTONIC COMPONENTS GMBH · DE

Inventors

• Ulrich Weichmann · Aachen, DE
• Philipp Henning Gerlach · Ulm, DE
• Susanne Weidenfeld · Weilheim, DE
• Holger Moench · Vaals, NL

Key dates

• Filing date: Dec 1, 2021
• Grant date: Jan 7, 2025
• Expiry date: Sep 3, 2043

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/18377
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A vertical cavity surface emitting laser device includes: an optical resonator; a photodiode; and a contact arrangement. The optical resonator includes: two distributed Bragg reflectors (DBRs) and an active region between the DBRs. The photodiode has a light absorption region in the optical resonator. The contact arrangement provides drive current to pump the optical resonator, and contacts the photodiode. The active region has an InxGa1-xAs layer, where 0≤x<1. The light absorption region has an InyGa1-yAs layer, where 0<y<1, and y>x. The InyGa1-yAs layer is an intrinsic layer of the light absorption region. The InyGa1-yAs layer is 15-50 nm thick. The light absorption region has an undoped layer with a material different from the InyGa1-yAs layer. The InyGa1-yAs layer is immediately adjacent to the undoped layer. An intrinsic zone of the light absorption region is at least 70 nm thick.