Semiconductor structure and method for forming semiconductor structure
US12193222B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2022 |
| Grant date | Jan 7, 2025 |
| Priority date | — |
| Expiry date | Sep 9, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/315
Abstract
The embodiment of the application provides a semiconductor structure and a method for forming a semiconductor structure. The method includes: a substrate structure is provided, in which the substrate structure at least including bit line structures and a plurality of landing pads, each of the plurality of landing pads is formed around a respective one of the bit line structures and covers a part of the respective one of the bit line structures, and a gap is formed between each two adjacent landing pads of the plurality of landing pads; and capacitive structures are formed on top surfaces of the plurality of landing pads and in the gaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.