Patent · US Active

High-temperature chip

US12196623B2 · kind B2 · utility

1Cited by

3References

14Claims

0Family size

Assignee

Yageo Nexensos GmbH · DE

Inventors

Matsvei Zinkevich · Goldbach, DE
Tim Asmus · Allendorf (Lumda), DE
Stefan Dietmann · Haiterbach, DE

Key dates

Filing date	May 14, 2020
Grant date	Jan 14, 2025
Priority date	—
Expiry date	Sep 11, 2041

Classification

Technology area (CPC G)Physics
CPC primaryG01K2007/163
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

One aspect relates to a high-temperature sensor, having a coated substrate. The substrate contains a zirconium oxide or a zirconium oxide ceramic, at least one resistance structure and at least two connection contacts. The connection contacts electrically contact the resistance structure. The substrate is coated with an insulation layer. The insulation layer contains a metal oxide layer, the resistance structure and the free regions of the insulation layer, on which no resistance structure is arranged, are coated at least in regions with a ceramic intermediate layer, and a protective layer and/or a cover is arranged on the ceramic intermediate layer. At least one opening is formed in the insulation layer, which exposes at least sections of a surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.