Patent · US Active

Semiconductor device and electronic system including the same

US12199044B2 · kind B2 · utility

0Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 6, 2022
Grant dateJan 14, 2025
Priority date
Expiry dateJul 5, 2043

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B43/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A peripheral circuit structure may include peripheral circuits and peripheral circuit lines on a semiconductor substrate, a semiconductor layer including cell array and connection regions on the peripheral circuit structure, a stack including electrodes stacked on the semiconductor layer having a stepwise structure on the connection region, and a planarization insulating layer covering the stack, vertical structures on the cell array region penetrating the stack, including a data storage pattern, a dam group including insulating dams on the connection region penetrating the stack, penetration plugs penetrating the insulating dams and connected to respective peripheral circuit lines, the dam group including a first insulating dam farthest from the cell array region, the first insulating dam including first and second sidewall portions spaced apart, a difference between upper and lower thicknesses of the second sidewall portion of the first insulating dam is larger than that of the first sidewall portion.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.