Semiconductor device
US12199057B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2024 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Jul 31, 2044 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01M10/425
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: a transistor provided in a first region of a semiconductor layer in a plan view; a transistor provided in a second region adjacent to the first region of the semiconductor layer in the plan view; and a drain pad provided in a third region not overlapping the first region and the second region in the plan view. In the plan view, the first region and the second region are one region and an other region that divide an area of the semiconductor layer excluding the third region in half. In the plan view, the transistors are arranged in a first direction. The center of the third region is located on a straight center line that divides the semiconductor layer in half in the first direction and is orthogonal to the first direction. In the plan view, the drain pad is contained in the third region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.