Solid-state imaging device with increased bonding strength, and method of manufacturing the solid-state imaging device
US12199121B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 3, 2019 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | May 21, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A solid-state imaging device capable of preventing variation in bonding strength in a bonding plane between a first semiconductor substrate and a second semiconductor substrate is provided. The solid-state imaging device includes a first semiconductor substrate having a plurality of first conductors, and a second semiconductor substrate bonded to the first semiconductor substrate and having a plurality of second conductors In a bonding plane between the first and second semiconductor substrates, the device includes regions where the conductors overlap, regions where insulating films and the conductors overlap, and regions where the insulating films overlap. The proportion of areas where the first insulating films and the second insulating films are bonded together to the bonding area between the first semiconductor substrate and the second semiconductor substrate is constant before and after the first semiconductor substrate and the second semiconductor substrate are bonded together.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.