Image sensor
US12199127B2 · kind B2 · utility
0Cited by
5References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 17, 2021 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Apr 23, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/018
Abstract
An image sensor includes a first substrate. A photoelectric conversion region is in the first substrate. A first interlayer insulating layer is on the first substrate. A transistor includes a bonding insulating layer on the first interlayer insulating layer, a semiconductor layer on the bonding insulating layer, and a first gate on the semiconductor layer. A bias pad is spaced apart from the semiconductor layer by the bonding insulating layer. The bias pad overlaps the first gate in a planar view. A second interlayer insulating layer covers the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.