Apparatus for integrated microwave photonics on a sapphire platform, method of forming same, and applications of same
US12199130B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2021 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Jan 11, 2043 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B2006/12142
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated microwave photonics (IMWP) apparatus is provided using sapphire as a platform. The IMWP apparatus includes: a sapphire substrate having a step-terrace surface; and a III-V stack layer epitaxially grown on the sapphire substrate. The III-V stack layer includes: a first III-V layer disposed on the sapphire substrate; a low temperature (LT) III-V buffer layer disposed on the first III-V layer; multiple second III-V layers disposed and stacked on the LT III-V buffer layer; a third III-V layer disposed on the second III-V layers; a III-V quantum well layer disposed on the third III-V layers; and a fourth III-V layer disposed on the III-V quantum well layer. The second III-V layers are respectively annealed. A growth temperature of the LT III-V layer and a growth temperature of the III-V quantum well layer are lower than a growth temperature of each of the first, second, third and fourth III-V layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.