Semiconductor device with gradual injection of charge carriers for softer reverse recovery
US12199141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2021 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Nov 6, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device a first semiconductor layer of a first conductivity type at a first main side of a semiconductor wafer and a second semiconductor layer of a second conductivity type at second main side. The second semiconductor layer forms a pn junction with the first semiconductor layer. A first electrode is in ohmic contact with the first semiconductor layer and a second electrode layer is in ohmic contact with the second semiconductor layer. A first semiconductor region of the first conductivity type completely embedded in the second semiconductor layer and a second semiconductor region of the first conductivity type completely embedded in the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.