Patent · US Active

Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

US12199218B2 · kind B2 · utility

0Cited by
1References
12Claims
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Assignee

Inventors

Key dates

Filing dateMar 14, 2019
Grant dateJan 14, 2025
Priority date
Expiry dateSep 18, 2040

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8513

Abstract

In an embodiment an optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a radiation exit surface and side surfaces running transversely with respect to the radiation exit surface, the optoelectronic semiconductor chip configured to emit primary radiation through the radiation exit surface, a conversion element arranged on the radiation exit surface, the conversion element configured to convert at least part of the primary radiation into secondary radiation and including a stack of at least two conversion layers and a reflective element laterally surrounding the optoelectronic semiconductor chip, wherein a lateral extent of the conversion layers decreases from a layer which is closest to the radiation exit surface to a layer which is most distant from the radiation exit surface, wherein the conversion element includes a part laterally extending beyond the radiation exit surface and being concavely curved, wherein the conversion element is partly arranged on the reflective element, and wherein the conversion element is arranged on a concavely curved surface of the reflective element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.