Transversely-excited film bulk acoustic resonator fabrication using wafer-to-wafer bonding
US12199584B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2021 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Apr 1, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/021
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An acoustic resonator device is formed using a wafer-to-wafer bonding process by etching recesses into a first surface of a piezoelectric substrate, a depth of the recesses greater than a target piezoelectric membrane thickness; then wafer-to-wafer bonding the first surface of the piezoelectric substrate to a handle wafer using a releasable bonding method. The piezoelectric substrate is then thinned to the target piezoelectric membrane thickness to form a piezoelectric plate and at least one conductor pattern is formed on the thinned piezoelectric plate. The side of the thinned piezoelectric plate having the conductor pattern is bonded to a carrier wafer using a metal-to-metal wafer bonding process and the handle wafer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.