Semiconductor switches for high voltage operations
US12199597B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2023 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Jul 12, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Semiconductor switches for high voltage operations are described. The semiconductor switch includes a first DE-NMOS FET including a gate coupled to a node of the switch with its source and drain coupled to input and output nodes, respectively. The switch also includes a second DE-NMOS FET with a drain coupled to the node. A gate of the second DE-NMOS FET is configured to receive a signal enabling or disabling the switch. The switch includes a voltage source (e.g., a voltage-controlled voltage source) coupled to the node, which supplies a first voltage at the node. The first voltage is greater than a second voltage at the input node by a predetermined amount such that the first DE-NMOS FET may operate within a safe operating area while supporting high voltage operations. The switch also includes a current source configured to supply current to the voltage source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.