Power transistor thermal control via integrated thermoelectric device
US12199607B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | Jan 31, 2023 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Jan 31, 2043 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present disclosure introduces integrated circuits and related manufacturing methods, wherein each integrated circuit includes an electronic device and a thermoelectric circuit. The electronic device is formed in and/or over a semiconductor substrate. The thermoelectric circuit includes thermopiles formed in and/or over the semiconductor substrate and electrically connected in series. The thermoelectric circuit is configured to modulate operation of the electronic device in response to a potential produced by the plurality of thermopiles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.