Semiconductor memory device and production method thereof
US12200931B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Oct 1, 2021 |
| Grant date | Jan 14, 2025 |
| Priority date | — |
| Expiry date | Jan 22, 2042 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a semiconductor memory device includes, when three directions crossing each other are set to first, second, and third directions, respectively, laminating a plurality of first laminates and a plurality of second laminates on a semiconductor substrate in the third direction. The method further includes forming ends of the plurality of first laminates in shapes of steps extending in the first direction, and forming ends of the plurality of second laminates in shapes of steps extending in both directions of the first direction and the second direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.